| No. |
Part Name |
Description |
Manufacturer |
| 481 |
1N992 |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 482 |
1N992A |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 483 |
1SMC5384 |
Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 160 V. Test current Izt = 8 mA. |
Panjit International Inc |
| 484 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 485 |
1V014 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
| 486 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 487 |
1V017 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 27 V @ 1mA DC test current. |
NTE Electronics |
| 488 |
1V020 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 33 V @ 1mA DC test current. |
NTE Electronics |
| 489 |
1V025 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 39 V @ 1mA DC test current. |
NTE Electronics |
| 490 |
1V030 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 47 V @ 1mA DC test current. |
NTE Electronics |
| 491 |
1V035 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 56 V @ 1mA DC test current. |
NTE Electronics |
| 492 |
1V040 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
| 493 |
1V050 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 82 V @ 1mA DC test current. |
NTE Electronics |
| 494 |
1V060 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 100 V @ 1mA DC test current. |
NTE Electronics |
| 495 |
1V075 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 120 V @ 1mA DC test current. |
NTE Electronics |
| 496 |
1V095 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
| 497 |
1V115 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 498 |
1V130 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 499 |
1V150 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 500 |
1V175 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
| 501 |
1V250 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 502 |
1V275 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 503 |
1V300 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 504 |
2K0S-N005 |
Input voltage 200-260 VAC;output voltage 5 VDC;output current:270 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 505 |
2K0S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:167 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 506 |
2K0S-N015 |
Input voltage 200-260 VAC;output voltage 15 VDC;output current:134 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 507 |
2K0S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:83.5 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 508 |
2K0S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:42 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 509 |
2SJ103 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 510 |
2SJ104 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
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