No. |
Part Name |
Description |
Manufacturer |
481 |
K4E660812C-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
482 |
KAD5510P-50 |
10-Bit, 500MSPS Single-Channel ADC, with LVDS/LVCMOS Outputs |
Intersil |
483 |
KAD5512P-50 |
12-Bit, 500MSPS Single-Channel ADC, with LVDS/LVCMOS Outputs |
Intersil |
484 |
KM416C1004BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
485 |
KM416C1004BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
486 |
KM416C1004BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
487 |
KM416C1004BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
488 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
489 |
KM416C1004CJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
490 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
491 |
KM416C1004CT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
492 |
KM416C1004CT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
493 |
KM416C1004CTL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
494 |
KM416C1204BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
495 |
KM416C1204BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
496 |
KM416C1204BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
497 |
KM416C1204BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
498 |
KM416C1204CJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
499 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
500 |
KM416C1204CJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
501 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
502 |
KM416C1204CT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
503 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
504 |
KM416C1204CT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
505 |
KM416C1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
506 |
KM416C4004CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns |
Samsung Electronic |
507 |
KM416C4004CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns |
Samsung Electronic |
508 |
KM416C4104CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns |
Samsung Electronic |
509 |
KM416C4104CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns |
Samsung Electronic |
510 |
KM416V1004BJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
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