| No. |
Part Name |
Description |
Manufacturer |
| 481 |
GS881Z18AT-150I |
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 482 |
GS881Z18BT-150I |
150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 483 |
GS881Z36AT-150 |
150MHz 7.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 484 |
GS881Z36AT-150I |
150MHz 7.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 485 |
GS881Z36BT-150 |
150MHz 7.5ns 256K x 36 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 486 |
GS881Z36BT-150I |
150MHz 7.5ns 256K x 36 9Mb pupelined and flow through sync NBT SRAM |
GSI Technology |
| 487 |
HM6216255HLTT-15 |
4M high Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
| 488 |
HM6216255HTT-15 |
4M high Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
| 489 |
HM62256ALT-15 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 490 |
HM62256ALT-15SL |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 491 |
HM62W16255HLTT-15 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
| 492 |
HM62W16255HTT-15 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
| 493 |
HN28F101T-15 |
131072-word ?? 8-bit CMOS Flash Memory |
etc |
| 494 |
HN58C1001T-15 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 495 |
HN58C1001T-15 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 496 |
HN58C1001T-15E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 497 |
HN58S256AT-15 |
256 k EEPROM (32-kword x 8-bit) |
Hitachi Semiconductor |
| 498 |
HN58S65AT-15 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
Hitachi Semiconductor |
| 499 |
HY29F040AT-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 500 |
HY29F040AT-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 501 |
HY29F040AT-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 502 |
HY57V161610ET-15I |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
| 503 |
ICT-15 |
Transient Voltage Suppressor |
Microsemi |
| 504 |
ICT-15C |
Transient Voltage Suppressor |
Microsemi |
| 505 |
IP123AT-15 |
3 AMP POSITIVE VOLTAGE REGULATORS |
SemeLAB |
| 506 |
IP123T-15 |
3 AMP POSITIVE VOLTAGE REGULATORS |
SemeLAB |
| 507 |
IP323AT-15 |
3 AMP POSITIVE VOLTAGE REGULATORS |
SemeLAB |
| 508 |
IP3R17AT-15 |
3 AMP FIXED NEGATIVE VOLTAGE REGULATORS |
SemeLAB |
| 509 |
IP3R17T-15 |
3 AMP FIXED NEGATIVE VOLTAGE REGULATORS |
SemeLAB |
| 510 |
IS61LPD25632T-150TQ |
256K x 32 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| | | |
