No. |
Part Name |
Description |
Manufacturer |
481 |
HYB39T512800TCL-75 |
MEMORY SPECTRUM |
Infineon |
482 |
HYB39T512800TCL-7F |
MEMORY SPECTRUM |
Infineon |
483 |
ICS300 |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
484 |
ICS300M |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
485 |
ICS300MT |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
486 |
ICS301M |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
487 |
ICS301MT |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
488 |
ICS302M |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
489 |
ICS302MT |
QTClock�� Quick Turn Clock Synthesizer |
Integrated Circuit Systems |
490 |
K4E640812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
491 |
K4E640812B-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
492 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
493 |
K4E640812C-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
494 |
K4E640812C-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
495 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
496 |
K4E660812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
497 |
K4E660812B-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
498 |
K4E660812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
499 |
K4E660812C-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
500 |
K4E660812C-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
501 |
K4E660812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
502 |
K4S280432E-TCL75 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz |
Samsung Electronic |
503 |
K4S280432F-TCL75 |
128Mb F-die SDRAM Specification |
Samsung Electronic |
504 |
K4S280832B-TCL10 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
505 |
K4S280832B-TCL1H |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
506 |
K4S280832B-TCL1L |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
507 |
K4S280832B-TCL75 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
508 |
K4S280832B-TCL80 |
4M x 8Bit x 4 Banks Sychronous DRAM |
Samsung Electronic |
509 |
K4S280832E-TCL75 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz |
Samsung Electronic |
510 |
K4S280832F-TCL75 |
128Mb F-die SDRAM Specification |
Samsung Electronic |
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