| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 482 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 483 |
2N5490 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 484 |
2N5492 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 485 |
2N5494 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 486 |
2N5496 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 487 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 488 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 489 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 490 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 491 |
2SB1357 |
Transistor PNP (low collector saturation voltage wide safe operation area) |
ROHM |
| 492 |
2SB337 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 493 |
2SB471 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 494 |
2SB472 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 495 |
2SB54 |
Germanium PNP alloy junction audio transistor |
TOSHIBA |
| 496 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
| 497 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 498 |
2SC4703 |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 499 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 500 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 501 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 502 |
2SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
ST Microelectronics |
| 503 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
| 504 |
2SD2209 |
For power amplification and switching |
Panasonic |
| 505 |
33NQ52 |
Detection and mixer point contact diode |
Tesla Elektronicke |
| 506 |
3450 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 507 |
3451 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 508 |
3452 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 509 |
3455 |
Precision Linear Isolation Amplifier |
Burr Brown |
| 510 |
3456 |
Isolated Instrumentation Amplifier |
Burr Brown |
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