No. |
Part Name |
Description |
Manufacturer |
4861 |
RF1S70N06 |
70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
4862 |
RFD16N03 |
16A/ 30V/ Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
4863 |
RFG45N06 |
45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
4864 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4865 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4866 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4867 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4868 |
RFM12P08 |
P-CHANNEL ENHANCEMENT-MODE |
General Semiconductor |
4869 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4870 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4871 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
4872 |
RFV10N50 |
10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs |
Intersil |
4873 |
RFV10N50BE |
10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs |
Intersil |
4874 |
RLD03N06CLE |
0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
4875 |
RLD03N06CLESM |
0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
4876 |
RLP03N06CLE |
0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
Fairchild Semiconductor |
4877 |
S1T2410B01 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
4878 |
S1T2410B01-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
4879 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
4880 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
4881 |
S551 |
Announcement identification for traffic information decoder |
Siemens |
4882 |
S8201 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
4883 |
S8202 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
4884 |
S8269A |
4-BIT comparator, is a functional and pin-for-pin replacement for the DM8200 |
Signetics |
4885 |
S8269F |
4-BIT comparator, is a functional and pin-for-pin replacement for the DM8200 |
Signetics |
4886 |
S8269W |
4-BIT comparator, is a functional and pin-for-pin replacement for the DM8200 |
Signetics |
4887 |
SA701 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
4888 |
SA702 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
4889 |
SA741 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
4890 |
SAA7165WP |
Video enhancement and digital-to-analog processor (VEDA2). |
Philips |
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