| No. |
Part Name |
Description |
Manufacturer |
| 4861 |
MD3134 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 4862 |
MD3134F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 4863 |
MD4957 |
Dual PNP silicon annular 450-MHz amplifier designed for high-gain, low-noise amplifier, oscillator, and mixer applications |
Motorola |
| 4864 |
MFE2133 |
N-Channel junction silicon field-effect transistor designed for high-level chopper applications |
Motorola |
| 4865 |
MG100H2YL1 |
NPN transistor for high power switching and notor control applications, 600V, 100A |
Westcode Semiconductors |
| 4866 |
MG100M2YK1 |
NPN transistor for high power switching and notor control applications, 1000V, 100A |
Westcode Semiconductors |
| 4867 |
MG100Q2YK1 |
NPN transistor for high power switching and notor control applications, 1200V, 100A |
Westcode Semiconductors |
| 4868 |
MG150M2YK1 |
NPN transistor for high power switching and notor control applications, 1000V, 150A |
Westcode Semiconductors |
| 4869 |
MG150Q2YK1 |
NPN transistor for high power switching and notor control applications, 1200V, 150A |
Westcode Semiconductors |
| 4870 |
MG200M1UK1 |
NPN transistor for high power switching and notor control applications, 1000V, 200A |
Westcode Semiconductors |
| 4871 |
MG200Q1UK1 |
NPN transistor for high power switching and notor control applications, 1200V, 200A |
Westcode Semiconductors |
| 4872 |
MG300G1UL1 |
Silicon NPN CTR module for high switching and motor control applications |
TOSHIBA |
| 4873 |
MG300M1UK1 |
NPN transistor for high power switching and notor control applications, 1000V, 300A |
Westcode Semiconductors |
| 4874 |
MG300Q1UK1 |
NPN transistor for high power switching and notor control applications, 1200V, 300A |
Westcode Semiconductors |
| 4875 |
MIC5162 |
Dual Regulator Controller For High-Speed Bus Termination |
Micrel Semiconductor |
| 4876 |
MIG20J806HA |
Silicon N-channel integrated IGBT module for high power switching, motor control applications |
TOSHIBA |
| 4877 |
MJ3029 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
| 4878 |
MJ3030 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
| 4879 |
MJD122-1 |
NPN transistor for high DC current gain, 100V, 8A |
ON Semiconductor |
| 4880 |
MJD122-1 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 4881 |
MJD122T4 |
NPN darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 4882 |
MJD127 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
| 4883 |
MJD127-1 |
PNP transistor for high DC current gain, 100V, 8A |
Fairchild Semiconductor |
| 4884 |
MJD127-1 |
PNP transistor for high DC current gain, 100V, 8A |
ON Semiconductor |
| 4885 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 8A |
Samsung Electronic |
| 4886 |
MJD127-1 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 4887 |
MJD127T4 |
PNP darlington transistor for high DC current gain, 100V, 5A |
SGS Thomson Microelectronics |
| 4888 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 4889 |
MJE16204-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS 6A 45 and 80 Watts 550 Volts |
ON Semiconductor |
| 4890 |
MJL16218-D |
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors |
ON Semiconductor |
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