| No. |
Part Name |
Description |
Manufacturer |
| 4891 |
27C160 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4892 |
27C2001 |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4893 |
27C4001 |
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
| 4894 |
27C4001 |
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4895 |
27C4002 |
4 Mbit 256Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4896 |
27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM |
Winbond Electronics |
| 4897 |
27C512 |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
| 4898 |
27C512 |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4899 |
27C512-120 |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4900 |
27C64 |
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4901 |
27C64-150 |
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4902 |
27C64-200 |
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4903 |
27C800 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4904 |
27C801 |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4905 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 4906 |
28 DIP |
28DIP Package Dimensions |
Samsung Electronic |
| 4907 |
28 SOP |
28SOP Package Dimensions |
Samsung Electronic |
| 4908 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
| 4909 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 4910 |
28C16 |
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
ST Microelectronics |
| 4911 |
28F256 |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 4912 |
2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
| 4913 |
2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
| 4914 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 4915 |
299D |
Solid Tantalum Capacitors, Solid-Electrolyte TANTALEX Capacitors, Tripole Triple-Lead, Resin-Coated |
Vishay |
| 4916 |
29F002 |
2M (256K X 8) BIT |
Fujitsu Microelectronics |
| 4917 |
29F002 |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
| 4918 |
29F002 |
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 4919 |
29F010 |
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
| 4920 |
29F010 |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory |
ST Microelectronics |
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