| No. |
Part Name |
Description |
Manufacturer |
| 4891 |
NB7V58M |
Clock / Data Multiplexer / Translator, 1.8 V / 2.5 V / 3.3 V Differential 2:1, with CML Outputs |
ON Semiconductor |
| 4892 |
NB7V72M |
1.8 V / 2.5 V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator |
ON Semiconductor |
| 4893 |
NB7VQ572M |
1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator |
ON Semiconductor |
| 4894 |
NB7VQ58M |
Clock / Data Multiplexer / Translator, 1.8 V / 2.5 V / 3.3 V Differential 2:1, with CML Outputs and Selectable Input Equalizer |
ON Semiconductor |
| 4895 |
NCN4557 |
1.8 V / 3.0 V Dual SIM / SAM / Smart Card Power Supply And Level Shifter |
ON Semiconductor |
| 4896 |
NL6EBX-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 4897 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 4898 |
NL6EBX-L2-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 4899 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 4900 |
NTE1130 |
Integrated Circuit Color TV Demodulator |
NTE Electronics |
| 4901 |
NTE1801 |
Integrated Circuit TV dbx Noise Reduction System |
NTE Electronics |
| 4902 |
NTE230 |
Silicon Controlled Rectifier (SCR) TV Deflection Circuit |
NTE Electronics |
| 4903 |
NTE231 |
Silicon Controlled Rectifier (SCR) TV Deflection Circuit |
NTE Electronics |
| 4904 |
NTE77 |
Silicon NPN Transistor Broadband CATV Driver |
NTE Electronics |
| 4905 |
NTE97 |
Silicon NPN Transistor HV Darlington Power Amp, Switch |
NTE Electronics |
| 4906 |
NTE98 |
Silicon NPN Transistor HV Darlington Power Amp, Switch |
NTE Electronics |
| 4907 |
NTHD4401P |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 4908 |
NTHD4401PT1 |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 4909 |
NTHD4401PT1G |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 4910 |
NTHD4401PT3 |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 4911 |
NTHD4401PT3G |
Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ |
ON Semiconductor |
| 4912 |
NTJD2152P |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4913 |
NTJD2152PT1 |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4914 |
NTJD2152PT1G |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4915 |
NTJD2152PT2 |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4916 |
NTJD2152PT2G |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4917 |
NTJD2152PT4 |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4918 |
NTJD2152PT4G |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection |
ON Semiconductor |
| 4919 |
NTUD3170NZ |
Small Signal MOSFET 20 V Dual N−Channel, SOT−963 Package |
ON Semiconductor |
| 4920 |
NTUD3171PZ |
Small Signal MOSFET −20 V Dual P−Channel SOT−963 Package |
ON Semiconductor |
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