| No. |
Part Name |
Description |
Manufacturer |
| 4951 |
BAV13 |
Glass passivated silicon switching diode using the latest technology for high currents, rings color code orange-orange-green |
Texas Instruments |
| 4952 |
BAV24 |
Glass passivated silicon switching diode, high currents, marking with colored rings brown-red-yellow |
Texas Instruments |
| 4953 |
BAV44 |
High speed, high current diode for servo-amplifiers, digital voltmeters and oscilloscopes |
Mullard |
| 4954 |
BAW55 |
Silicon signal diode - high current switching |
SESCOSEM |
| 4955 |
BAX81 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-brown-black |
Texas Instruments |
| 4956 |
BAX82 |
Glass passivated silicon switching diode of the latest technology for high currents, color code gray-red-none |
Texas Instruments |
| 4957 |
BAY41 |
Silicon planar, medium current fast switching diode |
Felvezeto Katalogus 1966 |
| 4958 |
BAY42 |
Silicon planar, medium current fast switching diode |
Felvezeto Katalogus 1966 |
| 4959 |
BAY42 |
Silicon signal diode - high current switching |
SESCOSEM |
| 4960 |
BAY43 |
Silicon planar, medium current fast switching diode |
Felvezeto Katalogus 1966 |
| 4961 |
BAY44 |
Silicon general purpose diode with low reverse current |
Siemens |
| 4962 |
BAY45 |
Silicon general purpose diode with low reverse current |
Siemens |
| 4963 |
BAY46 |
Silicon general purpose diode with low reverse current |
Siemens |
| 4964 |
BAY74 |
Silicon signal diode - high current switching |
SESCOSEM |
| 4965 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 4966 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 4967 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 4968 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 4969 |
BC108C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 4970 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 4971 |
BC109C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 4972 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 4973 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 4974 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 4975 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 4976 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 4977 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 4978 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 4979 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 4980 |
BC327 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
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