| No. |
Part Name |
Description |
Manufacturer |
| 4951 |
TPS1120DR |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 4952 |
TPS1120Y |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 4953 |
TPS1120YD |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 4954 |
TQ9303 |
Fibre Channel Encoder/Decoder |
TriQuint Semiconductor |
| 4955 |
TSD4M150 |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 4956 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 4957 |
TSD4M150F |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 4958 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 4959 |
TSD4M150V |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 4960 |
TZ400BD |
30 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4961 |
TZ402BD |
15 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4962 |
TZ403BD |
15 V, 60 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4963 |
TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4964 |
TZ404CY |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4965 |
UFT5-28 |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 4966 |
UFT5-28SL |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 4967 |
UGF27025 |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 4968 |
UGF27025F |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 4969 |
UPA1717G-E1 |
P-channel enhancement type power MOS FET |
NEC |
| 4970 |
UPA1717G-E2 |
P-channel enhancement type power MOS FET |
NEC |
| 4971 |
UPA1720G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4972 |
UPA1720G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4973 |
UPA1721G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4974 |
UPA1721G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4975 |
UPA1722G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4976 |
UPA1722G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4977 |
UPA1723G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4978 |
UPA1723G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4979 |
UPA1724G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4980 |
UPA1724G-E2 |
N-channel enhancement type power MOS FET |
NEC |
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