| No. |
Part Name |
Description |
Manufacturer |
| 4981 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 4982 |
2SK882 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 4983 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 4984 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 4985 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 4986 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 4987 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 4988 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 4989 |
3000EXD22 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 4990 |
3000HXD22 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 4991 |
3000YKD23 |
THYRISTOR SILICON DIFFUSED TYPE (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 4992 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 4993 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 4994 |
300EXH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 4995 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
| 4996 |
30FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4997 |
30FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4998 |
30FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4999 |
30FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5000 |
30GWJ2C42C |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5001 |
30GWJ2C42C |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5002 |
30GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5003 |
30GWJ2C48C |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5004 |
30GWJ2CZ47C |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5005 |
30GWJ2CZ47C |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5006 |
30JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5007 |
30JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5008 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5009 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5010 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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