| No. |
Part Name |
Description |
Manufacturer |
| 4981 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4982 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4983 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4984 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 4985 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
| 4986 |
2SC945 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 4987 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 4988 |
2SD1616A |
NPN SILICON TRANSISTOR |
Micro Electronics |
| 4989 |
2SD1619 |
LF Amplifier, Electronic Governor Applications |
SANYO |
| 4990 |
2SD1899 |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 4991 |
2SD1899-Z |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 4992 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 4993 |
2SD400 |
Low-Frequency Power Amp, Electronic Governor Applications |
SANYO |
| 4994 |
2SD471 |
SILICON TRANSISTORS |
Micro Electronics |
| 4995 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 4996 |
2SD545 |
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS |
SANYO |
| 4997 |
2SD570 |
Power Transistors |
Micro Electronics |
| 4998 |
2SD592 |
SILICON TRANSISTORS |
Micro Electronics |
| 4999 |
2SD592A |
SILICON TRANSISTORS |
Micro Electronics |
| 5000 |
2SD734 |
NPN Epitaxial Planar Silicon Transistor 1W AF Output, Electronic Governor, DC-DC Converter Applications |
SANYO |
| 5001 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 5002 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 5003 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 5004 |
2SK19 |
N-CHANNEL SILICON FET |
Micro Electronics |
| 5005 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 5006 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 5007 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 5008 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 5009 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 5010 |
2V010 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
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