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Datasheets for IERS

Datasheets found :: 31131
Page: | 163 | 164 | 165 | 166 | 167 | 168 | 169 | 170 | 171 |
No. Part Name Description Manufacturer
4981 BFP93A NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) Siemens
4982 BFQ10 Field effect transistor, differential amplifiers mble
4983 BFQ11 Field effect transistor, differential amplifiers mble
4984 BFQ12 Field effect transistor, differential amplifiers mble
4985 BFQ13 Field effect transistor, differential amplifiers mble
4986 BFQ14 Field effect transistor, differential amplifiers mble
4987 BFQ15 Field effect transistor, differential amplifiers mble
4988 BFQ16 Field effect transistor, differential amplifiers mble
4989 BFQ193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Siemens
4990 BFQ193 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Siemens
4991 BFQ19S RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
4992 BFQ19S NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) Siemens
4993 BFQ22S Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. Philips
4994 BFQ23 Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain Philips
4995 BFQ29 NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) Siemens
4996 BFQ29P NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) Siemens
4997 BFQ51C Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A Philips
4998 BFQ52 PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 Philips
4999 BFQ53 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 Philips
5000 BFQ63 NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers Philips
5001 BFQ70 NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) Siemens
5002 BFQ71 NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) Siemens
5003 BFQ72 NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) Siemens
5004 BFQ73 NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) Siemens
5005 BFQ73S NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) Siemens
5006 BFQ74 NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) Siemens
5007 BFQ75 PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) Siemens
5008 BFQ76 PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.) Siemens
5009 BFQ81 NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) Siemens
5010 BFQ82 NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) Siemens


Datasheets found :: 31131
Page: | 163 | 164 | 165 | 166 | 167 | 168 | 169 | 170 | 171 |



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