| No. |
Part Name |
Description |
Manufacturer |
| 4981 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 4982 |
BF840 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
| 4983 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 4984 |
BF841 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
| 4985 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 4986 |
BF959 |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35 - hFE |
Continental Device India Limited |
| 4987 |
BFP22 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 4988 |
BFP23 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 4989 |
BFP25 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 4990 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 4991 |
BFR64 |
NPN silicon multi-emitter transistor in a capstan envelope |
Philips |
| 4992 |
BFR65 |
NPN multi-emitter silicon transistor in a capstan envelope |
Philips |
| 4993 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 4994 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 4995 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 4996 |
BFS22A |
Transmitting transistor NPN |
mble |
| 4997 |
BFS23 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 4998 |
BFS23A |
Transmitting transistor NPN |
mble |
| 4999 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 5000 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 5001 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 5002 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 5003 |
BFW30 |
NPN multi-emitter high-frequency transistor |
Philips |
| 5004 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 5005 |
BFW47 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 5006 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 5007 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 5008 |
BGX7100HN |
Transmitter IQ modulator |
NXP Semiconductors |
| 5009 |
BGX7101HN |
Transmitter IQ modulator |
NXP Semiconductors |
| 5010 |
BIR-BL0331 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
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