| No. |
Part Name |
Description |
Manufacturer |
| 5011 |
CSD794AR |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744AR |
Continental Device India Limited |
| 5012 |
CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY |
Continental Device India Limited |
| 5013 |
CSD794O |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O |
Continental Device India Limited |
| 5014 |
CSD794R |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744R |
Continental Device India Limited |
| 5015 |
CSD794Y |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y |
Continental Device India Limited |
| 5016 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 5017 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 5018 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 5019 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 5020 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 5021 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 5022 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 5023 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 5024 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 5025 |
CURRENT |
Photocoupler - Supplementary Information |
TOSHIBA |
| 5026 |
CX20460 |
Power Management Integrated Circuit Device for GSM / GPRS Applications |
Skyworks Solutions |
| 5027 |
CXA1352AS |
2-channel 5 Elements Graphic Equalizer IC |
SONY |
| 5028 |
CXA1391Q |
Processing IC for Complementary Color Mosaic CCD Camera |
SONY |
| 5029 |
CXA1391Q/R |
Processing IC for Complementary Color Mosaic CCD |
SONY |
| 5030 |
CXA1391R |
Processing IC for Complementary Color Mosaic CCD Camera |
SONY |
| 5031 |
CXA1792 |
2-CHANNEL/ 5-ELEMENT GRAPHIC EQUALIZER IC |
SONY |
| 5032 |
CXA1792S |
2-Channel,5-Element Graphic Equalizer IC |
SONY |
| 5033 |
CXT3904NPN |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 5034 |
CXT3906PNP |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 5035 |
CXY11 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 5036 |
CXY13 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 5037 |
CXY14 |
Gallium arsenide, Gunn effect, element for the J-Band (Ku-Band) |
VALVO |
| 5038 |
CY7B9950 |
Clocks and Buffers : RoboClock Skew Management |
Cypress |
| 5039 |
CY7B9950AC |
Clocks and Buffers : RoboClock Skew Management |
Cypress |
| 5040 |
CY7B9950AI |
Clocks and Buffers : RoboClock Skew Management |
Cypress |
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