No. |
Part Name |
Description |
Manufacturer |
5011 |
RM30TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5012 |
RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5013 |
RM30TB-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5014 |
RM30TB-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5015 |
RM30TB-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5016 |
RM30TC-24 |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5017 |
RM30TC-2H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5018 |
RM30TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5019 |
RM30TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5020 |
RM30TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5021 |
RM30TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5022 |
RM35HG-34S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
5023 |
RM35HG-34S |
MITSUBISHI FAST RECOVERY DIODE MODULES |
Mitsubishi Electric Corporation |
5024 |
RM400DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5025 |
RM400HA-20S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
5026 |
RM400HA-20S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5027 |
RM400HA-24S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
5028 |
RM400HA-24S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5029 |
RM400HV-34S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
5030 |
RM400HV-34S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5031 |
RM500DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5032 |
RM500DZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5033 |
RM500DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5034 |
RM500DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5035 |
RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5036 |
RM500DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5037 |
RM500HA-24 |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5038 |
RM500HA-2H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5039 |
RM500HA-H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5040 |
RM500HA-M |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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