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Datasheets for UT P

Datasheets found :: 11721
Page: | 164 | 165 | 166 | 167 | 168 | 169 | 170 | 171 | 172 |
No. Part Name Description Manufacturer
5011 MAX6726KAYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5012 MAX6726KAYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5013 MAX6726KAYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5014 MAX6726KAYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5015 MAX6726KAZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5016 MAX6726KAZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5017 MAX6726KAZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5018 MAX6726KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5019 MAX6727KALTD3-T Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5020 MAX6727KAMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5021 MAX6727KAMSD3-T Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5022 MAX6727KARDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5023 MAX6727KARHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5024 MAX6727KARVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5025 MAX6727KARYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5026 MAX6727KASDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5027 MAX6727KASFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5028 MAX6727KASHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5029 MAX6727KASVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5030 MAX6727KASYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5031 MAX6727KATED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5032 MAX6727KATGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5033 MAX6727KATID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5034 MAX6727KATWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5035 MAX6727KATZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5036 MAX6727KAVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5037 MAX6727KAVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5038 MAX6727KAVHD3-T Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5039 MAX6727KAWED3-T Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
5040 MAX6727KAWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 11721
Page: | 164 | 165 | 166 | 167 | 168 | 169 | 170 | 171 | 172 |



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