No. |
Part Name |
Description |
Manufacturer |
5041 |
OC1045 |
Germanium PNP transistor |
Felvezeto Katalogus 1966 |
5042 |
OC1070 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5043 |
OC1071 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5044 |
OC1072 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5045 |
OC1074 |
Audio frequency PNP Germanium transistor |
Felvezeto Katalogus 1966 |
5046 |
OC1075 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5047 |
OC1076 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5048 |
OC1077 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5049 |
OC1079 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5050 |
OC26 |
Audio frequency PNP Ge power transistor |
Felvezeto Katalogus 1966 |
5051 |
OC44K |
Germanium PNP switching transistor |
Felvezeto Katalogus 1966 |
5052 |
OC70 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5053 |
OC71 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5054 |
OC72 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5055 |
OC74 |
Audio frequency PNP Germanium transistor |
Felvezeto Katalogus 1966 |
5056 |
OC75 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5057 |
OC76 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5058 |
OC77 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5059 |
OC79 |
Audio frequency PNP Germanium Transistor |
Felvezeto Katalogus 1966 |
5060 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5061 |
P4KE200CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5062 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5063 |
P6KE180 |
162- 198V transient voltage suppressor |
DC Components |
5064 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5065 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5066 |
P6KE200CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5067 |
P6KE220C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
5068 |
P6KE24 |
Diode TVS Single Uni-Dir 19.4V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
5069 |
P6KE24C |
Diode TVS Single Bi-Dir 19.4V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
5070 |
PACKAGES |
Packages from National Semiconductor Discrete Databook 1978 |
National Semiconductor |
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