| No. |
Part Name |
Description |
Manufacturer |
| 5071 |
2KBP10G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5072 |
2KBP10M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 5073 |
2KBP10M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
| 5074 |
2KBP10M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 5075 |
2KBP10M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 5076 |
2KBPO1G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5077 |
2KBPO2G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5078 |
2KBPO4G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5079 |
2KBPO6G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5080 |
2KBPO86 |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5081 |
2KBPOO5G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5082 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 5083 |
2N3021 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5084 |
2N3022 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5085 |
2N3023 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5086 |
2N3024 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5087 |
2N3025 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5088 |
2N3026 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 5089 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 5090 |
2N3375 |
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND |
Microsemi |
| 5091 |
2N3375 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
| 5092 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 5093 |
2N3632 |
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND |
Microsemi |
| 5094 |
2N3632 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
| 5095 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
| 5096 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 5097 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 5098 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
| 5099 |
2N3733 |
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND |
Microsemi |
| 5100 |
2N3733 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
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