| No. |
Part Name |
Description |
Manufacturer |
| 5101 |
MSP430P337AIPJM |
16-Bit Ultra-Low-Power Microcontroller, 32kB OTP, 1KB RAM, USART, HW multiplier, 120 segment LCD |
Texas Instruments |
| 5102 |
MSP430P337AIPJMR |
16-Bit Ultra-Low-Power Microcontroller, 32kB OTP, 1KB RAM, USART, HW multiplier, 120 segment LCD |
Texas Instruments |
| 5103 |
MSP430P337IPJM |
16-Bit Ultra-Low-Power Microcontroller, 32kB OTP, 1KB RAM, USART, HW multiplier, 120 segment LCD |
Texas Instruments |
| 5104 |
MUR1100 |
Diode Ultra Fast Recovery Rectifier 1KV 1A 2-Pin Case 59-04 |
New Jersey Semiconductor |
| 5105 |
MUR1100E |
Diode Switching 1KV 1A 2-Pin DO-41 Bag |
New Jersey Semiconductor |
| 5106 |
MUR1100EG |
Diode Switching 1KV 1A 2-Pin DO-41 Bag |
New Jersey Semiconductor |
| 5107 |
MUR4100 |
Diode Switching 1KV 4A 2-Pin Case 267-01 |
New Jersey Semiconductor |
| 5108 |
MUR4100E |
Diode Switching 1KV 4A 2-Pin Case 267-05 Bulk |
New Jersey Semiconductor |
| 5109 |
MUR8100 |
Diode Switching 1KV 8A 2-Pin(2+Tab) TO-220AC Rail |
New Jersey Semiconductor |
| 5110 |
MUR8100E |
Diode Switching 1KV 8A 2-Pin(2+Tab) TO-220AC Rail |
New Jersey Semiconductor |
| 5111 |
MUR830 |
Diode Switching 1KV 8A 2-Pin(2+Tab) TO-220AC Rail |
New Jersey Semiconductor |
| 5112 |
MUR850 |
Diode Switching 1KV 8A 2-Pin(2+Tab) TO-220AC Rail |
New Jersey Semiconductor |
| 5113 |
N82S126A |
V(cc): 7.0V; 1K-bit TTL bipolar PROM |
Philips |
| 5114 |
N82S126N |
V(cc): 7.0V; 1K-bit TTL bipolar PROM |
Philips |
| 5115 |
N82S129A |
V(cc): 7.0V; 1K-bit TTL bipolar PROM |
Philips |
| 5116 |
N82S129N |
V(cc): 7.0V; 1K-bit TTL bipolar PROM |
Philips |
| 5117 |
N87C196KS |
Advanced 16-bit CHMOS microcontroller. EPROM 24K, Reg RAM 1K, Code RAM 256b, I/O 56 |
Intel |
| 5118 |
N87C196KT |
Advanced 16-bit CHMOS microcontroller. EPROM 32K, Reg RAM 1K, Code RAM 512b, I/O 56 |
Intel |
| 5119 |
N87C196NT |
CHMOS microcontroller with 1 Mbytes linear address space, 32K OTPROM, 1K Reg RAM, 512 Code RAM, 56 I/O |
Intel |
| 5120 |
NTE2102 |
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns |
NTE Electronics |
| 5121 |
NTE6508 |
Integrated Circuit CMOS, 1K Static RAM (SRAM) |
NTE Electronics |
| 5122 |
NTE829 |
Integrated Circuit Electronics Attenuator, 90dB @ 1kHz |
NTE Electronics |
| 5123 |
P1480 |
LAN CAM 1KX64 BIT CMOS CONTENT ADDRESSABLE MEMORY |
Zarlink Semiconductor |
| 5124 |
P2AU-0505E |
Input voltage:5V, output voltage 5V (50mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
| 5125 |
P2AU-0512E |
Input voltage:5V, output voltage 12V (20.83mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
| 5126 |
P2AU-0515E |
Input voltage:5V, output voltage 15V (16.66mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
| 5127 |
P2AU-0524E |
Input voltage:5V, output voltage 24V (10.42mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
| 5128 |
P2AU-1205E |
Input voltage:12V, output voltage 5V (50mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
| 5129 |
P2AU-1212E |
Input voltage:12V, output voltage 12V (20.83mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
| 5130 |
P2AU-1215E |
Input voltage:12V, output voltage 15V (16.66mA), 1KV isolated 0.25W unregulated single output |
PEAK electronics |
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