| No. |
Part Name |
Description |
Manufacturer |
| 511 |
NAND512W4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 512 |
NAND512W4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 513 |
NAND512W4A2AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 514 |
NAND512W4A2AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 515 |
NAND512W4A2AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 516 |
NAND512W4A2AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 517 |
NAND512W4A2AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 518 |
NAND512W4A2AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 519 |
OL2381AHN |
Highly integrated single-chip sub 1 GHz RF transceiver |
NXP Semiconductors |
| 520 |
PMBT3640 |
PNP 1 GHz switching transistor |
Philips |
| 521 |
PMBTH10 |
NPN 1 GHz general purpose switching transistor |
Philips |
| 522 |
PMBTH81 |
PNP 1 GHz switching transistor |
Philips |
| 523 |
Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 524 |
Q62702-F1063 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 525 |
Q62702-F1129 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 526 |
Q62702-F1587 |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 527 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 528 |
Q62702-F659 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 529 |
S175-50 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 530 |
S200-50 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 531 |
SA601DK |
Low voltage LNA and mixer - 1 GHz |
NXP Semiconductors |
| 532 |
SAB6456 |
Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler |
Philips |
| 533 |
SAB6456T |
Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler |
Philips |
| 534 |
SD1013 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 535 |
SD1014-06 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 536 |
SD1018 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 537 |
SD1019 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 538 |
SD1143-01 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 539 |
SD1224-02 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 540 |
SD1429-03 |
CW Class C ≤ 1 Ghz |
Microsemi |
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