No. |
Part Name |
Description |
Manufacturer |
511 |
1N4563C |
Diode Zener Single 6.8V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
512 |
1N4563D |
Diode Zener Single 6.8V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
513 |
1N4564 |
Diode Zener Single 7.5V 20% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
514 |
1N4564A |
Diode Zener Single 7.5V 10% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
515 |
1N4564B |
Diode Zener Single 7.5V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
516 |
1N4564C |
Diode Zener Single 7.5V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
517 |
1N4564D |
Diode Zener Single 7.5V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
518 |
2N6233 |
5A silicon 50W power, High-Voltage NPN transistor |
Motorola |
519 |
2N6234 |
5A silicon 50W power, High-Voltage NPN transistor |
Motorola |
520 |
2N6235 |
5A silicon 50W power, High-Voltage NPN transistor |
Motorola |
521 |
2N6294 |
4A Darlington silicon power NPN transistor 50W 60V |
Motorola |
522 |
2N6295 |
4A Darlington silicon power NPN transistor 50W 80V |
Motorola |
523 |
2N6296 |
4A Darlington silicon power PNP transistor 50W 60V |
Motorola |
524 |
2N6297 |
4A Darlington silicon power PNP transistor 50W 80V |
Motorola |
525 |
2SB816 |
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
526 |
2SD1046 |
NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
527 |
52228-B |
50V; 40 and 50W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
528 |
52250-2 |
50V; 40 and 50W true hermetically sealed proportionally controlled metal package heater hybrid |
Micropac Industries |
529 |
AN-758 |
Application Note - A TWO-STAGE 1kW solid-state linear amplifier - 50W and 300W linear amplifiers for the 1.6 to 30MHz, MRF427 and MRF428 |
Motorola |
530 |
AN005 |
Application Note - a 100KHz 50W Switching Regulator (Single-Ended Forward Type) Using the Bipolar Ring Emitter Transistor |
Fujitsu Microelectronics |
531 |
BU126 |
4A triple diffused power transistor NPN silicon 50W 750V |
Motorola |
532 |
BU126A |
4A triple diffused power transistor NPN silicon 50W 700V |
Motorola |
533 |
BUX84 |
Triple diffused power NPN silicon transistor 50W 2A 400V |
Motorola |
534 |
JO2015A |
UHF Power Transistor 50W 28Vcc |
Motorola |
535 |
JWS100-12 |
Single output 50W ~ 600W |
DENSEI-LAMBDA |
536 |
JWS100-15 |
Single output 50W ~ 600W |
DENSEI-LAMBDA |
537 |
JWS100-24 |
Single output 50W ~ 600W |
DENSEI-LAMBDA |
538 |
JWS100-3 |
Single output 50W ~ 600W |
DENSEI-LAMBDA |
539 |
JWS100-48 |
Single output 50W ~ 600W |
DENSEI-LAMBDA |
540 |
JWS100-5 |
Single output 50W ~ 600W |
DENSEI-LAMBDA |
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