| No. |
Part Name |
Description |
Manufacturer |
| 511 |
HS-4424BRH |
MOSFET Driver, Dual Non-Inverting, 250ns, 2A, 7.5V LVLO, Rad-Hard |
Intersil |
| 512 |
IDT72V36100L7.5PF |
3.3V, high-density, low power, 65536 x 36-bit FIFO, 7.5ns |
IDT |
| 513 |
IDT72V36110L7.5PF |
3.3V, high-density, low power, 131072 x 36-bit FIFO, 7.5ns |
IDT |
| 514 |
IDT72V3640L7.5PF |
3.3V, high-density, low power, 1024 x 36-bit FIFO, 7.5ns |
IDT |
| 515 |
IDT72V3650L7.5PF |
3.3V, high-density, low power, 2048 x 36-bit FIFO, 7.5ns |
IDT |
| 516 |
IDT72V3660L7.5PF |
3.3V, high-density, low power, 4096 x 36-bit FIFO, 7.5ns |
IDT |
| 517 |
IDT72V3670L7.5PF |
3.3V, high-density, low power, 8192 x 36-bit FIFO, 7.5ns |
IDT |
| 518 |
IDT72V3680L7.5PF |
3.3V, high-density, low power, 16384 x 36-bit FIFO, 7.5ns |
IDT |
| 519 |
IDT72V3690L7.5PF |
3.3V, high-density, low power, 32768 x 36-bit FIFO, 7.5ns |
IDT |
| 520 |
IRFF212 |
Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 521 |
IRFF212R |
Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 522 |
IRFF213 |
Trans MOSFET N-CH 150V 7.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 523 |
ISPLSI5256VE-125LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 524 |
ISPLSI5256VE-125LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 525 |
ISPLSI5256VE-125LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 526 |
ISPLSI5256VE-125LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 527 |
ISPLSI5256VE-125LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 528 |
ISPLSI5256VE-125LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 529 |
ISPLSI5256VE-125LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 530 |
ISPLSI5256VE-125LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 531 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 532 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 533 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 534 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 535 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 536 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 537 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 538 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 539 |
KM416L8031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
| 540 |
KM416L8031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
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