| No. |
Part Name |
Description |
Manufacturer |
| 511 |
B80C1500G |
Glass Passivated Single-Phase, Bridge Rectifiers, Forward Current 1.5A |
Vishay |
| 512 |
B80C800DM |
Glass Passivated Single-Phase Bridge Rectifier, Rectifier Forward Current 0.9 A |
Vishay |
| 513 |
B80C800G |
Glass Passivated Single-Phase Bridge Rectifier, Rectifier Forward Current 0.9 A |
Vishay |
| 514 |
BA157 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 515 |
BA157 |
Fast Switching Plastic Rectifier, Forward Current 1.0A |
Vishay |
| 516 |
BA157GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0 A |
Vishay |
| 517 |
BA158 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 518 |
BA158 |
Fast Switching Plastic Rectifier, Forward Current 1.0A |
Vishay |
| 519 |
BA158GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0 A |
Vishay |
| 520 |
BA159 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 521 |
BA159 |
Fast Switching Plastic Rectifier, Forward Current 1.0A |
Vishay |
| 522 |
BA159D |
Fast Switching Plastic Rectifier, Forward Current 1.0A |
Vishay |
| 523 |
BA159GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0 A |
Vishay |
| 524 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 525 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 526 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 527 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 528 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 529 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 530 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 531 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 532 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 533 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 534 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 535 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 536 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 537 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 538 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 539 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 540 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
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