| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2SA812R |
PNP silicon epitaxial transistor, audio frequency |
NEC |
| 512 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 513 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 514 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 515 |
2SA984 |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
| 516 |
2SA984K |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
| 517 |
2SA985 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 518 |
2SA986A |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 519 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 520 |
2SB1000 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 |
Hitachi Semiconductor |
| 521 |
2SB1000A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
Hitachi Semiconductor |
| 522 |
2SB1015 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 523 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 524 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 525 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 526 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
| 527 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 528 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
| 529 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 530 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 531 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
| 532 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 533 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 534 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 535 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 536 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 537 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 538 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 539 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 540 |
2SB1314 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION |
Mitsubishi Electric Corporation |
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