| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 512 |
2SC5801 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD |
NEC |
| 513 |
2SC5801-T3 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD |
NEC |
| 514 |
2SC732 |
Silicon NPN epitaxial planar transistor, low noise amplifier applications |
TOSHIBA |
| 515 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 516 |
2SJ108 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 517 |
2SJ74 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 518 |
2SK117 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 519 |
2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 520 |
2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 521 |
2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER |
Hitachi Semiconductor |
| 522 |
2SK209 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 523 |
2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 524 |
2SK222 |
N-Channel Junction Silicon FET Low-Frequency, Low Noise Amplifier Applications |
SANYO |
| 525 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 526 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 527 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 528 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 529 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 530 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 531 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 532 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 533 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 534 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 535 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 536 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 537 |
5962-0254401QZA |
Single/ Dual Ultra Low Noise Wideband Operational Amplifier |
National Semiconductor |
| 538 |
5962-0254401QZA |
Single/ Dual Ultra Low Noise Wideband Operational Amplifier |
National Semiconductor |
| 539 |
5962-0623601 |
670MHz Low Noise Amplifiers |
Intersil |
| 540 |
5962-0623602 |
670MHz Low Noise Amplifiers |
Intersil |
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