| No. |
Part Name |
Description |
Manufacturer |
| 511 |
3KP26 |
3000W TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 512 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 513 |
3N126 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 514 |
3PMT26 |
Transient Voltage Suppressor |
Microsemi |
| 515 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
| 516 |
3SK226 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
| 517 |
40526 |
2.5A 200V Sensitive-Gate Silicon Triacs |
RCA Solid State |
| 518 |
40726 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 519 |
41026 |
1GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 520 |
4AC26 |
Power Transistor Arrays |
ROHM |
| 521 |
4AK26 |
FET Arrays |
Hitachi Semiconductor |
| 522 |
4AK26 |
Silicon N-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 523 |
4N26 |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 524 |
4N26 |
6-Pin DIP Optoisolators Transistor Output |
Motorola |
| 525 |
4N26 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 526 |
4N26 |
Optoelectronic coupling element (Optocoupler) |
TELEFUNKEN |
| 527 |
4N26 |
Optocoupler 6-PDIP |
Texas Instruments |
| 528 |
4N26 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
| 529 |
5082-7626 |
5082-7626 · 7.6 mm (0.3 inch) Overflow Character Displays |
Agilent (Hewlett-Packard) |
| 530 |
54126 |
Quad BUS Buffer Gate (With 3-State Outputs) |
Fairchild Semiconductor |
| 531 |
5426 |
Quad 2-Input NAND Buffer (With Open-Collector Outputs) |
Fairchild Semiconductor |
| 532 |
54LS126 |
Quad BUS Buffer Gate (With 3-State Outputs) |
Fairchild Semiconductor |
| 533 |
54LS26 |
Quad 2-Input NAND Buffer (With Open-Collector Outputs) |
Fairchild Semiconductor |
| 534 |
54LS26 |
Quadruple 2-Input NAND Gate with open-collector outputs |
IPRS Baneasa |
| 535 |
54LS26 |
Dual 5-Input NOR Gate |
National Semiconductor |
| 536 |
5962-03226 |
40W Total Output Power 28 Vin +5, +/-12 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03226 |
International Rectifier |
| 537 |
5962-03226 |
40W Total Output Power 28 Vin +5, +/-12 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03226 |
International Rectifier |
| 538 |
5962-94626 |
30W Total Output Power 28 Vin +15 Vout Single DC-DC Standard Converter in an ATR Package. DLA Number 5962-94626 |
International Rectifier |
| 539 |
5962-94626 |
30W Total Output Power 28 Vin +15 Vout Single DC-DC Standard Converter in an ATR Package. DLA Number 5962-94626 |
International Rectifier |
| 540 |
5KP26 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| | | |
