No. |
Part Name |
Description |
Manufacturer |
511 |
28LV256TM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
512 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
513 |
28LV256TM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
514 |
29C256 |
256K 32K x 8 5-volt Only CMOS Flash Memory |
Atmel |
515 |
51256SL |
256K(32K x 8) CMOS SLOW STATIC RAM |
Intel |
516 |
5962-8863401UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
517 |
5962-8863401XX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
518 |
5962-8863401YX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
519 |
5962-8863401ZX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
520 |
5962-8863402UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
521 |
5962-8863402XX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
522 |
5962-8863402YX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
523 |
5962-8863402ZX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
524 |
5962-8863403UX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
525 |
5962-8863403XX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
526 |
5962-8863403YX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
527 |
5962-8863403ZX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
528 |
5962-8863404UX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
529 |
5962-8863404XX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
530 |
5962-8863404YX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
531 |
5962-8863404ZX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
532 |
5962-9736101QYA |
16K/32K x 9 Deep Sync FIFOs |
Cypress |
533 |
5962F0151701QXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
534 |
5962F0151701QXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
535 |
5962F0151701QXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
536 |
5962F0151701QYA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
537 |
5962F0151701QYC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
538 |
5962F0151701QYX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
539 |
5962F0151701VXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
540 |
5962F0151701VXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
| | | |