| No. |
Part Name |
Description |
Manufacturer |
| 511 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 512 |
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 513 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 514 |
NE56900 |
4.5 GHz NPN medium power microwave transistor |
NEC |
| 515 |
NE56953E |
4.5 GHz NPN medium power microwave transistor |
NEC |
| 516 |
NE56954 |
4.5 GHz NPN medium power microwave transistor |
NEC |
| 517 |
NE56987 |
4.5 GHz NPN medium power microwave transistor |
NEC |
| 518 |
NGA-489 |
0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. |
Stanford Microdevices |
| 519 |
NTHD5904N |
Power MOSET 20 V, 4.5 A, Dual N-Channel ChipFET™ |
ON Semiconductor |
| 520 |
NTMS4700N |
Power MOSFET 30 V, 14.5 A, Single N-Channel, SO-8 |
ON Semiconductor |
| 521 |
NTMS4P01R2 |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package |
ON Semiconductor |
| 522 |
NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package |
ON Semiconductor |
| 523 |
PA7536J-15 |
4.5 to 5.5 V, speed 15=9 ns/15 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 524 |
PA7536JI-15 |
4.5 to 5.5 V, speed 15=9 ns/15 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 525 |
PA7536P-15 |
4.5 to 5.5 V, speed 15=9 ns/15 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 526 |
PA7536PI-15 |
4.5 to 5.5 V, speed 15=9 ns/15 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 527 |
PA7536S-15 |
4.5 to 5.5 V, speed 15=9 ns/15 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 528 |
PA7536SI-15 |
4.5 to 5.5 V, speed 15=9 ns/15 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 529 |
PA7572F-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 530 |
PA7572FI-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 531 |
PA7572J-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 532 |
PA7572JI-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 533 |
PA7572P-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 534 |
PA7572PI-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array |
Anachip |
| 535 |
PAL10016P8JC |
-4.5 V, 100 K, ECL programmable array logic |
National Semiconductor |
| 536 |
PBSS304PZ |
60 V, 4.5 A PNP low V_CEsat (BISS) transistor |
Nexperia |
| 537 |
PBSS304PZ |
60 V, 4.5 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 538 |
PBSS305PZ |
80 V, 4.5 A PNP low V_CEsat (BISS) transistor |
Nexperia |
| 539 |
PBSS305PZ |
80 V, 4.5 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 540 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
Nexperia |
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