| No. |
Part Name |
Description |
Manufacturer |
| 511 |
NTD5865NL |
Power MOSFET, 60 V, 46 A, 16 mΩ, N-Channel |
ON Semiconductor |
| 512 |
NTD5867NL |
NTD5867NL N-Channel Power MOSFET |
ON Semiconductor |
| 513 |
NTD5867NL |
NTD5867NL N-Channel Power MOSFET |
ON Semiconductor |
| 514 |
NTE2586 |
Silicon NPN Transistor High Voltage, High Speed Switch |
NTE Electronics |
| 515 |
NTE5586 |
Silicon Controlled Rectifier for Phase Control Applications |
NTE Electronics |
| 516 |
NTE586 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 517 |
NTE5860 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. |
NTE Electronics |
| 518 |
NTE5861 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. |
NTE Electronics |
| 519 |
NTE5862 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. |
NTE Electronics |
| 520 |
NTE5863 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. |
NTE Electronics |
| 521 |
NTE5864 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 522 |
NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. |
NTE Electronics |
| 523 |
NTE5866 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. |
NTE Electronics |
| 524 |
NTE5867 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. |
NTE Electronics |
| 525 |
NTE5868 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. |
NTE Electronics |
| 526 |
NTE5869 |
Silicon Power Rectifier Diode, 6 Amp |
NTE Electronics |
| 527 |
NTP5863N |
Power MOSFET |
ON Semiconductor |
| 528 |
NTP5864N |
Power MOSFET, 60 V, 63 A, 12.4 mΩ |
ON Semiconductor |
| 529 |
NVD5862N |
NVD5862N |
ON Semiconductor |
| 530 |
NVD5862N |
NVD5862N |
ON Semiconductor |
| 531 |
NVD5863NL |
Power MOSFET, 60 V, 82 A, 7.1 mΩ, Single N-Channel |
ON Semiconductor |
| 532 |
NVD5865NL |
Single N-Channel Power MOSFET |
ON Semiconductor |
| 533 |
NVD5867N |
NVD5867NL |
ON Semiconductor |
| 534 |
NVD5867N |
NVD5867NL |
ON Semiconductor |
| 535 |
NX8562LB862-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1586.20 nm. Frequency 189.00 THz. Anode ground. FC-PC connector. |
NEC |
| 536 |
NX8562LF862-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1586.20 nm. Frequency 189.00 THz. Anode floating. FC-PC connector. |
NEC |
| 537 |
NX8563LB862-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1586.20 nm. Frequency 189.00 THz. FC-PC connector. Anode ground. |
NEC |
| 538 |
NX8563LF862-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1586.20 nm. Frequency 189.00 THz. FC-PC connector. Anode floating. |
NEC |
| 539 |
OM5730 |
STB5860 Set-Top Box STB concept |
Philips |
| 540 |
P82586 |
IEEE 802.3 ethernet processor, 8MHz |
Intel |
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