| No. |
Part Name |
Description |
Manufacturer |
| 511 |
P6SMB130A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 512 |
P6SMB130AT3 |
High Power Transient Suppressor |
ON Semiconductor |
| 513 |
P6SMB130C |
TVS: Bidirectional |
Taiwan Semiconductor |
| 514 |
P6SMB130CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 515 |
P6SMB130CA |
TVS: Bidirectional |
Taiwan Semiconductor |
| 516 |
P6SMB13A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 517 |
P6SMB13A |
High Power Transient Suppressor |
ON Semiconductor |
| 518 |
P6SMB13A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 519 |
P6SMB13AT3 |
High Power Transient Suppressor |
ON Semiconductor |
| 520 |
P6SMB13C |
TVS: Bidirectional |
Taiwan Semiconductor |
| 521 |
P6SMB13CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 522 |
P6SMB13CA |
High Power Bidirectional |
ON Semiconductor |
| 523 |
P6SMB13CA |
TVS: Bidirectional |
Taiwan Semiconductor |
| 524 |
P6SMB13CAT3 |
High Power Bidirectional |
ON Semiconductor |
| 525 |
PAM3112DAB130 |
300mA CMOS LINEAR REGULATOR |
Diodes |
| 526 |
PB137 |
POSITIVE VOLTAGE REGUALTOR FOR BATTERY CHARGER |
SGS Thomson Microelectronics |
| 527 |
PB137 |
POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER |
ST Microelectronics |
| 528 |
PB137ACV |
POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER |
SGS Thomson Microelectronics |
| 529 |
PB137ACV |
POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER |
ST Microelectronics |
| 530 |
PEMB13 |
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ |
Nexperia |
| 531 |
PEMB13 |
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ |
NXP Semiconductors |
| 532 |
PEMB13 |
R1 = 4.7 kOhm, R2 = 47 kOhm |
Philips |
| 533 |
PHB130N03LT |
TrenchMOS transistor Logic level FET |
Philips |
| 534 |
PHB130N03T |
TrenchMOS transistor Standard level FET |
Philips |
| 535 |
PHB13N40E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 536 |
PMPB13XNE |
30 V, single N-channel Trench MOSFET |
Nexperia |
| 537 |
PMPB13XNE |
30 V, single N-channel Trench MOSFET |
NXP Semiconductors |
| 538 |
PMPB13XNEA |
30 V, N-channel Trench MOSFET |
Nexperia |
| 539 |
PUMB13 |
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ |
Nexperia |
| 540 |
PUMB13 |
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ |
NXP Semiconductors |
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