| No. |
Part Name |
Description |
Manufacturer |
| 511 |
AS91L1006U10F100IF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 512 |
AS91L1006U10F100IG |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 513 |
AS91L1006U40F100CF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 514 |
AS91L1006U40F100CG |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 515 |
AS91L1006U40F100I |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 516 |
AS91L1006U40F100IF |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 517 |
AS91L1006U40F100IG |
The AS91L1006BU is a one to 6-port JTAG gateway |
Alliance Semiconductor |
| 518 |
ASIHF100-28 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 519 |
AVF100 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 520 |
BD7F100EFJ-LB |
Optocoupler-less Isolated Flyback Converter |
ROHM |
| 521 |
BD7F100EFJ-LBE2 |
Optocoupler-less Isolated Flyback Converter |
ROHM |
| 522 |
BD7F100HFN-LB |
Optocoupler-less Isolated Flyback Converter |
ROHM |
| 523 |
BD7F100HFN-LBTR |
Optocoupler-less Isolated Flyback Converter |
ROHM |
| 524 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 525 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 526 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 527 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 528 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 529 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 530 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 531 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 532 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 533 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 534 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 535 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 536 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 537 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 538 |
CJF100 |
80.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. Complementary CJF105 |
Continental Device India Limited |
| 539 |
CJF105 |
80.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. Complementary CJF100 |
Continental Device India Limited |
| 540 |
CPF100F |
Product type: POTS splitter. System application: asymmetric digital subscriber line. |
YCL |
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