No. |
Part Name |
Description |
Manufacturer |
511 |
HD64F3337YTFLH16 |
Hitachi Single Chip Microcomputer |
Renesas |
512 |
HD64F333X |
Hitachi Single Chip Microcomputer |
Renesas |
513 |
HYF33DS512800ATC |
MEMORY SPECTRUM |
Infineon |
514 |
IRF330 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
515 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
516 |
IRF330 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
517 |
IRF330 |
5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
Intersil |
518 |
IRF330 |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
519 |
IRF330 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
520 |
IRF330 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
521 |
IRF330-333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
522 |
IRF3305 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
523 |
IRF3305PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
524 |
IRF330R |
Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
525 |
IRF331 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
526 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
527 |
IRF331 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
528 |
IRF331 |
Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
529 |
IRF331 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
530 |
IRF331 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
531 |
IRF3315 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
532 |
IRF3315L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
533 |
IRF3315L |
Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
534 |
IRF3315LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
535 |
IRF3315PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
536 |
IRF3315S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
537 |
IRF3315STRL |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
538 |
IRF3315STRR |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
539 |
IRF3315STRRPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
540 |
IRF331R |
Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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