No. |
Part Name |
Description |
Manufacturer |
511 |
300U10A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
512 |
300U10AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
513 |
300U160A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
514 |
300U160AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
515 |
300U200A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
516 |
300U200AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
517 |
300U20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
518 |
300U20AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
519 |
300U30A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
520 |
300U30AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
521 |
300U40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
522 |
300U40AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
523 |
300U60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
524 |
300U60AR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
525 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
526 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
527 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
528 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
529 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
530 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
531 |
3571AM |
High Current - High Power OPERATIONAL AMPLIFIERS |
Burr Brown |
532 |
3572AM |
High Current - High Power OPERATIONAL AMPLIFIERS |
Burr Brown |
533 |
3573AM |
High Current - High Power Operational Amplifier |
Burr Brown |
534 |
400U120D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
535 |
400U120DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
536 |
400U160D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
537 |
400U160DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
538 |
400U80D |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
539 |
400U80DR |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
540 |
40HF10 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
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