| No. |
Part Name |
Description |
Manufacturer |
| 511 |
HI-8583CJI-10 |
ARINC 429 SYSTEM ON A CHIP |
Holt Integrated Circuits |
| 512 |
HI-8683PJI-10 |
System component for interfacing incoming ARINC 429 signals to 8-bit parallel data |
Holt Integrated Circuits |
| 513 |
HI-8684PJI-10 |
ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 8-BIT PARALLEL DATA |
Holt Integrated Circuits |
| 514 |
HI-8685PJI-10 |
ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 16-BIT PARALLEL DATA |
Holt Integrated Circuits |
| 515 |
HM514260DJI-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 516 |
HM514260DJI-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 517 |
HM514260DLJI-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 518 |
HM514260DLJI-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 519 |
HM514800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 520 |
HM514800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 521 |
HM514800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 522 |
HM514800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 523 |
HM51S4800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 524 |
HM51S4800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 525 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 526 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 527 |
HSP43168JI-40 |
Dual FIR Filter |
Intersil |
| 528 |
HSP45106JI-25 |
16-Bit Numerically Controlled Oscillator |
Intersil |
| 529 |
HSP45256JI-25 |
Binary Correlator |
Intersil |
| 530 |
HSP45256JI-33 |
Binary Correlator |
Intersil |
| 531 |
HSP50110JI-52 |
Digital Quadrature Tuner |
Intersil |
| 532 |
HSP50210JI-52 |
Digital Costas Loop |
Intersil |
| 533 |
KM681002CJI-10 |
128K x 8 high speed static RAM, 5V operating, 10ns |
Samsung Electronic |
| 534 |
KM681002CJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 535 |
KM681002CJI-15 |
128K x 8 high speed static RAM, 5V operating, 15ns |
Samsung Electronic |
| 536 |
KM681002CJI-20 |
128K x 8 high speed static RAM, 5V operating, 20ns |
Samsung Electronic |
| 537 |
KM681002CLJI-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
| 538 |
KM681002CLJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
| 539 |
KM681002CLJI-15 |
128K x 8 high speed static RAM, 5V operating, 15ns, low power |
Samsung Electronic |
| 540 |
KM681002CLJI-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
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