| No. |
Part Name |
Description |
Manufacturer |
| 511 |
HER1604A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 512 |
HER1604C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 513 |
HER1605A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 514 |
HER1605C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 515 |
HER1606A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 516 |
HER1606C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 517 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
| 518 |
HER801R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 519 |
HER802R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 520 |
HER803R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 521 |
HER804R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 522 |
HER805R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 523 |
HER806R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 524 |
HFBR-2521 |
HFBR-2521 · 5 MBd 600nm High Performance Link Receiver in Horizontal Package |
Agilent (Hewlett-Packard) |
| 525 |
HFBR-2522 |
HFBR-2522 · 1 MBd 600nm High Performance Link Receiver in Horizontal Package |
Agilent (Hewlett-Packard) |
| 526 |
HFBR-2523 |
HFBR-2523 · 40 kBd 600nm Low Current/Extended Distance Link Receiver in Horizontal Package |
Agilent (Hewlett-Packard) |
| 527 |
HFBR-2524 |
HFBR-2524 · 1 MBd 600nm Standard Link Receiver in Horizontal Package |
Agilent (Hewlett-Packard) |
| 528 |
HFBR-2528 |
HFBR-2528 · 10 MBd 650nm High Performance Link Receiver in Horizontal Package |
Agilent (Hewlett-Packard) |
| 529 |
HFBR-2531 |
HFBR-2531 · 5 MBd 600nm High Performance Link Receiver in Vertical Package |
Agilent (Hewlett-Packard) |
| 530 |
HFBR-2532 |
HFBR-2532 · 1 MBd 600nm High Performance Link Receiver in Vertical Package |
Agilent (Hewlett-Packard) |
| 531 |
HFBR-2533 |
HFBR-2533 · 40 kBd 600nm Low Current/Extended Distance Link Receiver in Vertical Package |
Agilent (Hewlett-Packard) |
| 532 |
HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 533 |
HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 534 |
HM5112805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 535 |
HM5112805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 536 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 537 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 538 |
HM5113805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 539 |
HM5113805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 540 |
HM5113805FLTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
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