| No. |
Part Name |
Description |
Manufacturer |
| 511 |
KM68U1000BL/L-L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
| 512 |
KM68V1000BL/L-L |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
Samsung Electronic |
| 513 |
LM70EVAL-LLP |
SPI/MICROWIREtrade10-Bit plus Sign Digital Temperature Sensor |
National Semiconductor |
| 514 |
LXHL-LB3C |
Luxeon III Star |
etc |
| 515 |
LXHL-LE3C |
Luxeon III Star |
etc |
| 516 |
LXHL-LM3C |
Luxeon III Star |
etc |
| 517 |
LXHL-LR3C |
Luxeon III Star |
etc |
| 518 |
LXHL-LW3C |
Luxeon III Star |
etc |
| 519 |
LXT332 |
Dual T1/E1 Line Interface Unit with Crystal-less Attenuation |
Level One |
| 520 |
LXT350 |
Integrated T1/E1 S/H Transceivers With Crystal-less Jitter Attenuation |
Level One |
| 521 |
LXT350NE |
Integrated T1/E1 S/H transceiver with crystal-less jitter attenuation |
Level One |
| 522 |
LXT350PE |
Integrated T1/E1 S/H transceiver with crystal-less jitter attenuation |
Level One |
| 523 |
LXT350QE |
Integrated T1/E1 S/H Transceivers With Crystal-less Jitter Attenuation |
Level One |
| 524 |
LXT351 |
T1/E1 Short Haul Transceiver with Crystal-less Jitter Attenuation |
Intel |
| 525 |
M368L3223CTL-LA2 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity |
Samsung Electronic |
| 526 |
M368L3223CTL-LB0 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity |
Samsung Electronic |
| 527 |
M368L3223CTL-LB3 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity |
Samsung Electronic |
| 528 |
M38510/30608B2A |
Parallel-Load 8-Bit Shift Registers 20-LCCC -55 to 125 |
Texas Instruments |
| 529 |
M38510/30608BEA |
Parallel-Load 8-Bit Shift Registers 16-CDIP -55 to 125 |
Texas Instruments |
| 530 |
M38510/30608BFA |
Parallel-Load 8-Bit Shift Registers 16-CFP -55 to 125 |
Texas Instruments |
| 531 |
M38510/30609B2A |
Parallel-Load 8-Bit Shift Registers 20-LCCC -55 to 125 |
Texas Instruments |
| 532 |
M38510/30609BEA |
Parallel-Load 8-Bit Shift Registers 16-CDIP -55 to 125 |
Texas Instruments |
| 533 |
M61111FP |
Coil-less VIF/SIF |
Hitachi Semiconductor |
| 534 |
MAX3394E |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
| 535 |
MAX3394EEBL+ |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
| 536 |
MAX3394EEBL+G45 |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
| 537 |
MAX3394EEBL+T |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
| 538 |
MAX3394EEBL+TG45 |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
| 539 |
MAX3394EETA+ |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
| 540 |
MAX3394EETA+T |
±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry |
MAXIM - Dallas Semiconductor |
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