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Datasheets for LD-EFFECT TRA

Datasheets found :: 1174
Page: | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |
No. Part Name Description Manufacturer
511 2N5953 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
512 2N6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
513 2N6449 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
514 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
515 2N6450 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
516 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
517 2N6451 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
518 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
519 2N6452 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
520 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
521 2N6453 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
522 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
523 2N6454 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
524 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
525 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
526 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
527 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
528 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
529 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
530 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
531 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
532 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
533 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
534 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
535 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
536 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
537 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
538 2N7000 N-channel enhancement mode field-effect transistor Philips
539 2N7002 N-channel enhancement mode field-effect transistor Philips
540 2SJ11 Field-effect transistor TOSHIBA


Datasheets found :: 1174
Page: | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |



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