No. |
Part Name |
Description |
Manufacturer |
511 |
2N6043 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
512 |
2N6044 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
513 |
2N6045 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
514 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
515 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
516 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
517 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
518 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
519 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
520 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
521 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
522 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
523 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
524 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
525 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
526 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
527 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
528 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
529 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
530 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
531 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
532 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
533 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
534 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
535 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
536 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
537 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
538 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
539 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
540 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
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