| No. |
Part Name |
Description |
Manufacturer |
| 511 |
R810 |
Output power: 100 mWatts; in-building cellular repeater |
WJ Communications |
| 512 |
R820 |
Output power: 4 Watts; cellular repeater |
WJ Communications |
| 513 |
RF PRODUCTS |
SEC Solution for CDMA Cellular Phone |
Samsung Electronic |
| 514 |
RF2376 |
CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 515 |
RF2376PCBA |
CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 516 |
RF2377 |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 517 |
RF2377-410PCBA |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 518 |
RF2377-411PCBA |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 519 |
RF2381 |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 520 |
RF2381PCBA |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER |
RF Micro Devices |
| 521 |
RF2861 |
CDMA Cellular LNA/Mixer |
RF Micro Devices |
| 522 |
RF2890 |
DUAL-BAND CDMA CELLULAR/GPS LOW NOISE AMPLIFIER/MIXER |
RF Micro Devices |
| 523 |
RMBA09501 |
Cellular 2W Base Station PA |
Fairchild Semiconductor |
| 524 |
RMBA09501A |
Cellular 2 Watt Linear GaAs MMIC Power Amplifier |
Fairchild Semiconductor |
| 525 |
RMPA0951-102 |
3V cellular CDMA power amplifier module |
Raytheon |
| 526 |
RMPA0951A-102 |
3V cellular CDMA power amplifier module |
Raytheon |
| 527 |
RMPA0953-103 |
3V cellular AMPS and CDMA power amplifier module |
Raytheon |
| 528 |
RMPA0963 |
Cellular CDMA and CDMA2000-1X Power Amplifier Module |
Fairchild Semiconductor |
| 529 |
SA1921 |
Satellite and cellular dual-band RF front-end |
Philips |
| 530 |
SA1921BE |
Satellite and cellular dual-band RF front-end |
Philips |
| 531 |
SA3603 |
Cellular-band low voltage front-end |
Philips |
| 532 |
SA3603DH |
Cellular-band low voltage front-end |
Philips |
| 533 |
SCELL500 |
RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS |
SGS Thomson Microelectronics |
| 534 |
SD1400-02 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 535 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
| 536 |
SD1495 |
870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 537 |
SD1650 |
CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 538 |
SD4017 |
806-960 MHz CELLULAR BASE STATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 539 |
SD4590 |
RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION |
SGS Thomson Microelectronics |
| 540 |
SD4590 |
800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS |
ST Microelectronics |
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