| No. |
Part Name |
Description |
Manufacturer |
| 511 |
MAN8010 |
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS |
QT Optoelectronics |
| 512 |
MAN8040 |
DOUBLE HETEROJUNCTION AlGaAs RED LOW CURRENT DISPLAYS |
Fairchild Semiconductor |
| 513 |
MAN8040 |
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS |
QT Optoelectronics |
| 514 |
MCU01N80 |
Medium Power MOSFETS |
Micro Commercial Components |
| 515 |
MCU02N80 |
Medium Power MOSFETS |
Micro Commercial Components |
| 516 |
MDD100N800 |
100A 800V Double-Diode Compact Module |
IPRS Baneasa |
| 517 |
MDD125N800 |
125A 800V Double Diode Compact Module |
IPRS Baneasa |
| 518 |
MN8027 |
2048-bit CCD linear image sensor |
Panasonic |
| 519 |
MN80C48 |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
| 520 |
MN80C49 |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
| 521 |
MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS |
Motorola |
| 522 |
MTB4N80E |
OBSOLETE - 800 V, 4 A, POWER FET |
ON Semiconductor |
| 523 |
MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 524 |
MTB4N80E1 |
TMOS POWER FET 4.0 AMPERES 800 VOLTS |
Motorola |
| 525 |
MTB4N80E1 |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 526 |
MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 527 |
MTD1N80E |
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
Motorola |
| 528 |
MTD1N80E |
Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
| 529 |
MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 530 |
MTP1N80E |
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
Motorola |
| 531 |
MTP2N80 |
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 532 |
MTP4N80 |
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
Motorola |
| 533 |
MTP4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
Motorola |
| 534 |
MTP4N80E |
OBSOLETE - 4 Amp TO-220AB, N-Channel, VDSS 800 |
ON Semiconductor |
| 535 |
MTP4N80E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 536 |
MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 537 |
MTW4N80E |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 538 |
MTW7N80E |
TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM |
Motorola |
| 539 |
MTW7N80E |
OBSOLETE - Power MOSFET 7 Amps, 800 Volts |
ON Semiconductor |
| 540 |
MTW7N80E-D |
Power MOSFET 7 Amps, 800 Volts |
ON Semiconductor |
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