| No. |
Part Name |
Description |
Manufacturer |
| 511 |
BD175-10 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 512 |
BD175-16 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 513 |
BD175-6 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 514 |
BD177 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 515 |
BD177-10 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 516 |
BD177-6 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 517 |
BD179 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 518 |
BD179-10 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 519 |
BD179-6 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 520 |
BD233 |
25.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 521 |
BD235 |
25.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 522 |
BD237 |
25.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 523 |
BD433 |
36.000W Switching NPN Plastic Leaded Transistor. 22V Vceo, 4.000A Ic, 50 hFE. |
Continental Device India Limited |
| 524 |
BD435 |
36.000W Switching NPN Plastic Leaded Transistor. 32V Vceo, 4.000A Ic, 50 hFE. |
Continental Device India Limited |
| 525 |
BD437 |
36.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 40 hFE. |
Continental Device India Limited |
| 526 |
BD439 |
36.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 hFE. |
Continental Device India Limited |
| 527 |
BD441 |
36.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 15 hFE. |
Continental Device India Limited |
| 528 |
BD707 |
75.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 12.000A Ic, 40 - 400 hFE. |
Continental Device India Limited |
| 529 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 530 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 531 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 532 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 533 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 534 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 535 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 536 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 537 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 538 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 539 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 540 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
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