| No. |
Part Name |
Description |
Manufacturer |
| 511 |
IRGBC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) |
International Rectifier |
| 512 |
IRGBC40M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) |
International Rectifier |
| 513 |
IRGBF20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
International Rectifier |
| 514 |
IRGBF30 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A) |
International Rectifier |
| 515 |
IRGPC20U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A) |
International Rectifier |
| 516 |
IRGPC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A) |
International Rectifier |
| 517 |
IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A) |
International Rectifier |
| 518 |
IRGPH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
International Rectifier |
| 519 |
IRGPH40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
International Rectifier |
| 520 |
IRGPH50 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
International Rectifier |
| 521 |
IRGS30B60 |
INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
| 522 |
KA3162 |
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET |
Fairchild Semiconductor |
| 523 |
M57182N-315 |
UNINSULATED DC-DC CONVERTER |
Isahaya Electronics Corporation |
| 524 |
M57182N-416 |
Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 180V-450V. Output specifications 16V, 300mA. |
Isahaya Electronics Corporation |
| 525 |
M57183N-316 |
Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 110V-180V. Output specifications 15V, 100mA; 5V, 350mA. |
Isahaya Electronics Corporation |
| 526 |
M57184N-715A |
Hybrid IC. Uninsulated DC-DC converter. Input voltage range DC 220V-360V. Output specifications 15V, 350mA; 5V, 200mA. |
Isahaya Electronics Corporation |
| 527 |
MFE3001 |
Silicon N-channel insulated-gate field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 528 |
MG300Q1US11 |
INSULATED GATE BIPOLAR TRANSISTOR |
TOSHIBA |
| 529 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 530 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 531 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 532 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 533 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 534 |
MGP15N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| 535 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 536 |
MGP20N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| 537 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 538 |
MGP21N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 539 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 540 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
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