| No. |
Part Name |
Description |
Manufacturer |
| 511 |
AQW414EHAZ |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 512 |
AQY210EH |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 513 |
AQY210EHA |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 514 |
AQY210EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 515 |
AQY210EHAZ |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 516 |
AQY210HL |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 517 |
AQY210HLA |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 518 |
AQY210HLAX |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 519 |
AQY210HLAZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 520 |
AQY214EH |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 521 |
AQY214EHA |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 522 |
AQY214EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 523 |
AQY214EHAZ |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 524 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 525 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 526 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 527 |
ARZ145T05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 528 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 529 |
ARZ145T24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 530 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 531 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 532 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 533 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 534 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 535 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 536 |
ASIMV1807J1 |
SILICON VARACTOR DIODE |
Advanced Semiconductor |
| 537 |
AT76C506 |
AT76C506 single-chip MAC and Baseband with low power ARM7TDMI� RISC processor, PCI Bus Interface (compliant with PCI v2.2 and PCI Power Management Specification v1.1), integrated 6K x 32-bit Internal SRAM, 160-pin CABGA Package, 3.3V opera |
Atmel |
| 538 |
AU107 |
Germanium Diffused Collector PNP, typical application Vertical Large Screen TV Deflector |
SGS-ATES |
| 539 |
B310 |
β310 Silicon variable capacitance diode |
IPRS Baneasa |
| 540 |
B410 |
β410 Silicon variable capacitance diode |
IPRS Baneasa |
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