| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2SC3628 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 512 |
2SC3629 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 513 |
2SC3630 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 514 |
2SC3645 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
| 515 |
2SC3646 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 516 |
2SC3647 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 517 |
2SC3648 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
| 518 |
2SC3649 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 519 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 520 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 521 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 522 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 523 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 524 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 525 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 526 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 527 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 528 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 529 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
| 530 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 531 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 532 |
2SC3673 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS |
TOSHIBA |
| 533 |
2SC367G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
| 534 |
2SC3689 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 535 |
2SC3705 |
NPN Epitaxial Planar Silicon Darlington Transistor Printer Driver Applications |
SANYO |
| 536 |
2SC3708 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency Driver Applications |
SANYO |
| 537 |
2SC3709 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 538 |
2SC3709A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 539 |
2SC3710 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) |
TOSHIBA |
| 540 |
2SC3710A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
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