| No. |
Part Name |
Description |
Manufacturer |
| 511 |
BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop |
Infineon |
| 512 |
BAT60A |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 513 |
BAV45 |
Extremely low leakage and low capacitance diode (IR=10pA at VRRM) |
Mullard |
| 514 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 515 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 516 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 517 |
BCM5721 |
NetXtreme™ Gigabit Ethernet Controller for Servers |
Broadcom |
| 518 |
BCM5751 |
NetXtreme™ Gigabit Ethernet Controller for Desktops |
Broadcom |
| 519 |
BCM5751M |
NetXtreme™ Gigabit Ethernet Controller for Mobile PCs |
Broadcom |
| 520 |
BCR400R |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 521 |
BCR400W |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 522 |
BFT66 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
| 523 |
BFT66 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 524 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 525 |
BFT67 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
| 526 |
BFT67 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 527 |
BQ26220 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter with Voltage Measurement |
Texas Instruments |
| 528 |
BQ26220PW |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter with Voltage Measurement |
Texas Instruments |
| 529 |
BQ26220PWG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter w/ Voltage Measurement and HDQ Comm 8-TSSOP -20 to 70 |
Texas Instruments |
| 530 |
BQ26220PWR |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter with Voltage Measurement |
Texas Instruments |
| 531 |
BQ26220PWRG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter w/ Voltage Measurement and HDQ Comm 8-TSSOP -20 to 70 |
Texas Instruments |
| 532 |
BQ26221 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter w/Voltage Measurement |
Texas Instruments |
| 533 |
BQ26221PW |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter w/Voltage Measurement |
Texas Instruments |
| 534 |
BQ26221PW |
HIGH PERFORMANCE BATTERY MONITOR IC WITH COUOMB COUNTER/ VOLTAGE AND/ TEMPERATURE MEASUREMENT |
Texas Instruments |
| 535 |
BQ26221PWG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter w/Voltage Measurement & HDQ/OMAP Comm 8-TSSOP -20 to 70 |
Texas Instruments |
| 536 |
BQ26221PWR |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter w/Voltage Measurement |
Texas Instruments |
| 537 |
BSH111 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 538 |
BSH121 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 539 |
BSN20 |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 540 |
BSN20 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| | | |
