| No. |
Part Name |
Description |
Manufacturer |
| 511 |
T6F18 |
T6F18, JT6F18-AS CMOS Single-Chip LSI for LCD Calculator |
TOSHIBA |
| 512 |
T6F19 |
T6F19, JT6F19-AS CMOS Single-Chip LSI for LCD Calculator |
TOSHIBA |
| 513 |
T6M23A |
T6M23A, JT6M23A-AS CMOS Single-Chip LSI for LCD Calculator |
TOSHIBA |
| 514 |
T6M45 |
T6M45, JT6M45-AS CMOS Single-Chip LSI for LCD Calculator |
TOSHIBA |
| 515 |
T6M72 |
T6M72, JT6M72-AS CMOS Single-Chip LSI for LCD Calculator |
TOSHIBA |
| 516 |
TC1223 |
The TC1223 and TC1224 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices CMOS constructio neliminates wasted |
Microchip |
| 517 |
TC1224 |
The TC1223 and TC1224 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices CMOS constructio neliminates wasted |
Microchip |
| 518 |
TC1262 |
The TC1262 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1262’s CMOS construction eliminates wasted ground current, significantly extendi |
Microchip |
| 519 |
TC1263 |
The TC1263 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1263’s CMOS construction eliminates wasted ground current, significantly extendi |
Microchip |
| 520 |
TC1264 |
The TC1264 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1264’s CMOS construction eliminates wasted ground current, significantly extendi |
Microchip |
| 521 |
TC1265 |
The TC1265 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1265’s CMOS construction eliminates wasted ground current, significantly extendi |
Microchip |
| 522 |
TC1268 |
The TC1268 is a fixed output, fast turn-on, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1268’s CMOS construction eliminates wasted ground current, signifi |
Microchip |
| 523 |
TC1305 |
The TC1305 combines two CMOS Low Dropout Regulators and a Microprocessor Monitor in a space-saving 10-Pin MSOP package. Designed specifically for battery-operated systems, the device’s CMOS construction eliminates wasted ground curre |
Microchip |
| 524 |
TC1306 |
The TC1306 combines two CMOS Low Dropout Regulators and a Microprocessor Monitor in a space-saving 8-Pin MSOP package. Designed specifically for battery-operated systems, the device’s CMOS construction eliminates wasted ground curren |
Microchip |
| 525 |
TC1307 |
The TC1307 combines four CMOS Low Dropout Regulators and a Microprocessor Monitor in a space-saving 16-Pin QSOP package. Designed specifically for battery-operated systems, the device’s CMOS construction eliminates wasted ground curre |
Microchip |
| 526 |
TC2117 |
The TC2117 is a fixed, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC2117’s CMOS construction eliminates wasted ground current, significantly extending batt |
Microchip |
| 527 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 528 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 529 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 530 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 531 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 532 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 533 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 534 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
| 535 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 536 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
| 537 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 538 |
THS1030SOIC |
2.7 V . 5.5 V/ 10-BIT/ 30 MSPS CMOS ANALOG-TO-DIGITAL CONVERTER |
Texas Instruments |
| 539 |
THS1030TSSOP |
2.7 V . 5.5 V/ 10-BIT/ 30 MSPS CMOS ANALOG-TO-DIGITAL CONVERTER |
Texas Instruments |
| 540 |
THS1031SOIC |
2.7 V . 5.5 V/ 10-BIT/ 30 MSPS CMOS ANALOG-TO-DIGITAL CONVERTER |
Texas Instruments |
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