| No. |
Part Name |
Description |
Manufacturer |
| 511 |
J20A |
NS Package, physical dimensions |
National Semiconductor |
| 512 |
J22A |
NS Package, physical dimensions |
National Semiconductor |
| 513 |
J24A |
NS Package, physical dimensions |
National Semiconductor |
| 514 |
J24F |
NS Package, physical dimensions |
National Semiconductor |
| 515 |
LET9045F |
45W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package |
ST Microelectronics |
| 516 |
LET9060F |
60W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package |
ST Microelectronics |
| 517 |
LS2801R5S |
30W Total Output Power 28 Vin +1.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05238 |
International Rectifier |
| 518 |
LS2802R5S |
30W Total Output Power 28 Vin +2.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. |
International Rectifier |
| 519 |
LS2803R3S |
30W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05239 |
International Rectifier |
| 520 |
LS2805D |
30W Total Output Power 28 Vin +/-5 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. |
International Rectifier |
| 521 |
LS2805S |
30W Total Output Power 28 Vin +5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05240 |
International Rectifier |
| 522 |
LS2812D |
30W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05241 |
International Rectifier |
| 523 |
LS2812S |
30W Total Output Power 28 Vin +12 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06241 |
International Rectifier |
| 524 |
LS2815D |
30W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05242 |
International Rectifier |
| 525 |
LS2815S |
30W Total Output Power 28 Vin +15 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06242 |
International Rectifier |
| 526 |
M08B |
SO-8, Molded, 3 Lead NS Package No. M08B |
National Semiconductor |
| 527 |
MAG-725M4 |
Agilent MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package |
Agilent (Hewlett-Packard) |
| 528 |
MGA-725M4-BLK |
Low Noise Amplifier with Bypass Switch In Miniature Leadless Package |
Agilent (Hewlett-Packard) |
| 529 |
MGA-725M4-TR1 |
Low Noise Amplifier with Bypass Switch In Miniature Leadless Package |
Agilent (Hewlett-Packard) |
| 530 |
MGA-725M4-TR2 |
Low Noise Amplifier with Bypass Switch In Miniature Leadless Package |
Agilent (Hewlett-Packard) |
| 531 |
MPE-29G |
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package |
Sanken |
| 532 |
MRP7 |
Shape and dimensions package |
TRW |
| 533 |
MS-7 |
Case 630 Shape and dimensions package |
Silicon Transistor Corporation |
| 534 |
MT-27 |
Case 240 Shape and dimensions package |
Silicon Transistor Corporation |
| 535 |
MT-28 |
Case 250 Shape and dimensions package |
Silicon Transistor Corporation |
| 536 |
N08E |
NS Package, physical dimensions |
National Semiconductor |
| 537 |
N14A |
NS Package, physical dimensions |
National Semiconductor |
| 538 |
N16E |
NS Package, physical dimensions |
National Semiconductor |
| 539 |
N18A |
NS Package, physical dimensions |
National Semiconductor |
| 540 |
N20A |
NS Package, physical dimensions |
National Semiconductor |
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