| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2SC369 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 512 |
2SC370 |
General-Purpose Transistor |
TOSHIBA |
| 513 |
2SC371 |
General-Purpose Transistor |
TOSHIBA |
| 514 |
2SC372 |
General-Purpose Transistor |
TOSHIBA |
| 515 |
2SC373 |
General-Purpose Transistor |
TOSHIBA |
| 516 |
2SC374 |
General-Purpose Transistor |
TOSHIBA |
| 517 |
2SC4090 |
NPN silicon general purpose transistor (This datasheet of the NE73439 is also the datasheet of 2SC4090, see the Electrical Characteristics table) |
NEC |
| 518 |
2SC5808 |
General-Purpose Transistors |
SANYO |
| 519 |
2SC5823 |
General-Purpose Transistors |
SANYO |
| 520 |
2SC5951 |
General-Purpose Transistors |
SANYO |
| 521 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 522 |
2SD2121(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 523 |
2SD2121(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 524 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 525 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 526 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 527 |
2SD2123(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 528 |
2SD2707 |
General Purpose Transistor (50V/ 0.15A) |
ROHM |
| 529 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 530 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 531 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 532 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 533 |
5962R9858001QXC |
RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 534 |
5962R9858001VXC |
RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 535 |
5962R9858002QXC |
RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 536 |
5962R9858002VXC |
RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 537 |
5962R9858003QXC |
RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 538 |
5962R9858003VXC |
RadHard schmitt CMOS 16-bit bidirectional multipurpose transceiver: SMD. Total dose 1E5 rad(Si). Class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 539 |
61083 |
SURFACE MOUNT (PNP) GENERAL PURPOSE TRANSISTOR |
Micropac Industries |
| 540 |
61083-001 |
SURFACE MOUNT (PNP) GENERAL PURPOSE TRANSISTOR |
Micropac Industries |
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